Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation
- 作者：Benzohra ; Mohamed ; Olivie ; Franç ; ois ; Idrissi-Benzohra ; Malika ; Ketata ; Kaouther ; Ketata ; Mohamed
- 关键词：71.55.Cn ; Ge pre-amorphisation ; B+ implantation ; Secondary deep levels ; Isothermal transient capacitance ; Deep level transient spectroscopy ; End of range defects
- 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
- 出版年：2002
- 期刊代码：42_0168583x
- 类别：ph
- 出版时间：February, 2002
- 卷：187
- 期：2
- 页码：201-206
- 文件大小：169 K
摘要
It is well established that low energy B+ ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p+n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/1015cm−2B+ implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p+n diodes is clearly demonstrated.