Air stable organic complementary inverter with high and balance noise margin based on polymer/metal oxide hybrid gate dielectrics

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• 作者：Ting-Hsiang Huang ; Hsin-Cheng Lai ; Bo-Jie Tzeng ; Zingway Pei ; ^{zingway@dragon.nchu.edu.tw}
• 关键词：Air-stable ; Organic complementary inverter ; Balanced noise margin
• 刊名：Organic Electronics
• 出版年：2012
• 期刊代码：137_15661199
• 类别：et
• 出版时间：August, 2012
• 卷：13
• 期：8
• 页码：1365-1369
• 文件大小：406 K

摘要

This study demonstrates an ambient air operated organic complementary inverter composed of a pentacene p-channel and a N,N鈥?ditridecylperylene-3,4,9,10-tetracarboxylic diimide n-channel organic thin-film transistor (TFT) fabricating at room temperature. The gate dielectric is an ultrathin polystyrene-co-methyl methacrylate (PS-r-PMMA)-modified hafnium oxide hybrid layer. Grafting the PS-r-PMMA passivates the surface defects. The transistors exhibit balanced performance, including threshold voltage, on/off current ratio, and field effect mobility. Similar channel dimensions for both types of TFT can be designed for the inverter construction. The inverter operates well below 6 V. The switching voltage is approximately V_dd/2 with a high noise margin (87%of theoretical value), which is suitable for flexible logic applications.