Physical properties and electrical characteristics of H₂O-based and O₃-based HfO₂ films deposited by ALD

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• 作者：Jibin Fan ; ^{jbfan@mail.xidian.edu.cn} ; Hongxia Liu ; Qianwei Kuang ; Bo Gao ; Fei Ma ; Yue Hao
• 刊名：Microelectronics Reliability
• 出版年：2012
• 期刊代码：128_00262714
• 类别：et
• 出版时间：June, 2012
• 卷：52
• 期：6
• 页码：1043-1049
• 文件大小：685 K

摘要

Ozone (O₃) and H₂O are used as the oxidant to deposit hafnium oxide (HfO₂) thin films on p-type Si (1 0 0) wafers by atomic layer deposition (ALD). The physical properties and electrical characteristics of HfO₂ films change greatly for different oxidants and deposition temperature. Compared with O₃ as the oxidant, HfO₂ films grown with H₂O as the oxidant are more consistent in composition and growth rate. The O₃-based HfO₂ films have lower C impurity and higher concentration N impurity than the H₂O-based HfO₂ films. The impact of the annealing process on the electrical properties and stability of HfO₂ films are also investigated. A width step is observed in the O₃-based HfO₂ C-V curves, which disappears after annealing process. It is because the unstable Hf-O-N and Hf-N bonds in O₃-based HfO₂ films are re-bonded with the non-HfO₂ oxygen after annealing process, and the binding energy of N_1s shifts.