Electrochemical deposition of Bi ₂Te ₃ for thermoelectric microdevices

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• 作者：Kerstin Tittes ; Andreas Bund ; Waldfried Plieth ; Anders Bentien ; Silke Paschen ; Matthias Pl?tner ; Hartmut Gr?fe and Wolf-Joachim Fischer
• 关键词：Bismuth telluride films ; Cyclic voltammetry ; Electrodeposition ; Thermoelectric battery ; Thermoelectric sensor
• 刊名：Journal of Solid State Electrochemistry
• 出版年：2003
• 出版时间：October 2003
• 年：2003
• 卷：7
• 期：10
• 页码：714-723
• 全文大小：554 KB

文摘

The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3–4:3 lead to cathodic deposits of films of bismuth telluride (Bi₂Te₃), an n-type semiconductor. Current densities of 2–5 mA/cm2 were applied. Voltammetric investigations showed that Bi₂Te₃ deposition occurred at potentials more negative than −0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (γ-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.