用户名: 密码: 验证码:
Novel Electroactive Proton-Doped Conducting Poly(aromatic ethers) with Good Fluorescence Properties via Electropolymerization
详细信息    查看全文
  • 作者:Baoyang Lu ; Jun Yan ; Jingkun Xu ; Shuyun Zhou ; Xiujie Hu
  • 刊名:Macromolecules
  • 出版年:2010
  • 出版时间:May 25, 2010
  • 年:2010
  • 卷:43
  • 期:10
  • 页码:4599-4608
  • 全文大小:1025K
  • 年卷期:v.43,no.10(May 25, 2010)
  • ISSN:1520-5835
文摘
Low-potential electrochemical polymerization of a series of aromatic ethers in boron trifluoride diethyl etherate (BFEE), such as diphenyl ether (DPE), 1,4-diphenoxybenzene (DPOB), and 2,2′-dinaphthyl ether (DNE), led to successful deposition of a new class of electrically conducting proton-doped poly(aromatic ethers) thin films exhibiting good electroactivity and high thermal stability, whereas their sulfur analogues, diphenyl sulfide (DPS) and diphenyl sulfone (DPSO), were not eletropolymerizable. FT-IR, 1H NMR spectra, and computational results demonstrated that poly(1,4-diphenoxybenzene) (PDPOB) were synthesized mainly through the coupling of DPOB at para-positions, while the polymerization of DNE occurred probably at α- and C6-positions of the naphthyl rings to form poly(2,2′-dinaphthyl ether) (PDNE) with complex structure. It was found that the electrodeposited poly(aromatic ethers) probably showed proton-doping nature similar to polyaniline based on FT-IR spectral results and conductivity investigation. As-formed PDPOB and PDNE were typical blue light emitters and highly fluorescent, with solution quantum yields of as high as 0.40 and 0.18, respectively. Surface morphology determination revealed that regular and homogeneous microspheres with diameters in the range from 200 nm to 1 μm were assembled on ITO electrode after electrochemical growth. Electro-oxidation of aromatic ethers therefore offers a ready route to novel conducting, redox-active, luminescent conjugated polymers. These materials open up a new, unexplored, and potentially vast area of research on poly(aromatic ethers) and hold promise for the design of a new generation of optoelectronic materials.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700