Ultrasmooth, High Electron Mobility Amorphous In–Zn–O Films Grown by Atomic Layer Deposition

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• 作者：Do-Joong Lee ; Jang-Yeon Kwon ; Jiyeon Kim ; Ki-Ju Kim ; Yeong-Ho Cho ; Seong-Yong Cho ; Soo-Hyun Kim ; Jimmy Xu ; Ki-Bum Kim
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：January 9, 2014
• 年：2014
• 卷：118
• 期：1
• 页码：408-415
• 全文大小：399K
• ISSN：1932-7455

文摘

Ultrasmooth and highly conductive amorphous In鈥揨n鈥揙 (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In₂O₃ atomic-layers at a temperature of 200 掳C. The IZO films have an amorphous phase over a wide composition range, 43.2鈥?1.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 脳 10^鈥? 惟 cm and extremely high electron mobility in excess of 50 cm² V^鈥? s^鈥?, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.