Thermoelectric Properties of a Monolayer Bismuth

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• 作者：Long Cheng ; Huijun Liu ; Xiaojian Tan ; Jie Zhang ; Jie Wei ; Hongyan Lv ; Jing Shi ; Xinfeng Tang
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：January 16, 2014
• 年：2014
• 卷：118
• 期：2
• 页码：904-910
• 全文大小：346K
• ISSN：1932-7455

文摘

The structural and electronic properties of a two-dimensional monolayer bismuth are studied using density functional calculations. It is found that the monolayer forms a stable low-buckled hexagonal structure, which is reminiscent of silicene. The electronic transport properties of the monolayer bismuth are then evaluated by using Boltzmann theory with the relaxation time approximation. By fitting first-principles total energy calculations, a modified Morse potential is constructed, which is used to predicate the lattice thermal conductivity via equilibrium molecular dynamics simulations. The room temperature ZT value of a monolayer bismuth is estimated to be 2.1 and 2.4 for the n- and p-type doping, respectively. Moreover, the temperature dependence of ZT is investigated and a maximum value of 4.1 can be achieved at 500 K.