Perovskite Solar Cells Based on Low-Temperature Processed Indium Oxide Electron Selective Layers

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• 作者：Minchao Qin ; Junjie Ma ; Weijun Ke ; Pingli Qin ; Hongwei Lei ; Hong Tao ; Xiaolu Zheng ; Liangbin Xiong ; Qin Liu ; Zhiliang Chen ; Junzheng Lu ; Guang Yang ; Guojia Fang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 6, 2016
• 年：2016
• 卷：8
• 期：13
• 页码：8460-8466
• 全文大小：488K
• ISSN：1944-8252

文摘

Indium oxide (In<sub>2sub>O<sub>3sub>) as a promising n-type semiconductor material has been widely employed in optoelectronic applications. In this work, we applied low-temperature solution-processed In<sub>2sub>O<sub>3sub> nanocrystalline film as an electron selective layer (ESL) in perovskite solar cells (PSCs) for the first time. By taking advantages of good optical and electrical properties of In<sub>2sub>O<sub>3sub> such as high mobility, wide band gap, and high transmittance, we obtained In<sub>2sub>O<sub>3sub>-based PSCs with a good efficiency exceeding 13% after optimizing the concentration of the precursor solution and the annealing temperature. Furthermore, to enhance the performance of the In<sub>2sub>O<sub>3sub>-based PSCs, a phenyl-C<sub>61sub>-butyric acid methyl ester (PCBM) layer was introduced to modify the surface of the In<sub>2sub>O<sub>3sub> film. The PCBM film could fill up the pinholes or cracks along In<sub>2sub>O<sub>3sub> grain boundaries to passivate the defects and make the ESL extremely compact and uniform, which is conducive to suppressing the charge recombination. As a result, the efficiency of the In<sub>2sub>O<sub>3sub>-based PSC was improved to 14.83% accompanied with V<sub>OCsub>, J<sub>SCsub>, and FF being 1.08 V, 20.06 mA cm<sup>–2sup>, and 0.685, respectively.