Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules

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• 作者：Kyungjune Cho ; Misook Min ; Tae-Young Kim ; Hyunhak Jeong ; Jinsu Pak ; Jae-Keun Kim ; Jingon Jang ; Seok Joon Yun ; Young Hee Lee ; Woong-Ki Hong ; Takhee Lee
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：August 25, 2015
• 年：2015
• 卷：9
• 期：8
• 页码：8044-8053
• 全文大小：716K
• ISSN：1936-086X

文摘

We investigated the physical properties of molybdenum disulfide (MoS₂) atomic crystals with a sulfur vacancy passivation after treatment with alkanethiol molecules including their electrical, Raman, and photoluminescence (PL) characteristics. MoS₂, one of the transition metal dichalcogenide materials, is a promising two-dimensional semiconductor material with good physical properties. It is known that sulfur vacancies exist in MoS₂, resulting in the n-type behavior of MoS₂. The sulfur vacancies on the MoS₂ surface tend to form covalent bonds with sulfur-containing groups. In this study, we deposited alkanethiol molecules on MoS₂ field effect transistors (FETs) and then characterized the electrical properties of the devices before and after the alkanethiol treatment. We observed that the electrical characteristics of MoS₂ FETs dramatically changed after the alkanethiol treatment. We also observed that the Raman and PL spectra of MoS₂ films changed after the alkanethiol treatment. These effects are attributed to the thiol (鈭扴H) end groups in alkanethiols bonding at sulfur vacancy sites, thus altering the physical properties of the MoS₂. This study will help us better understand the electrical and optical properties of MoS₂ and suggest a way of tailoring the properties of MoS₂ by passivating a sulfur vacancy with thiol molecules.