Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
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- 作者：Meeghage Madusanka Perera ; Ming-Wei Lin ; Hsun-Jen Chuang ; Bhim Prasad Chamlagain ; Chongyu Wang ; Xuebin Tan ; Mark Ming-Cheng Cheng ; David Tom谩nek ; Zhixian Zhou
- 刊名：ACS Nano
- 出版年：2013
- 出版时间：May 28, 2013
- 年：2013
- 卷：7
- 期：5
- 页码：4449-4458
- 全文大小：532K
- 年卷期：v.7,no.5(May 28, 2013)
- ISSN：1936-086X
文摘
We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS<sub>2sub>. Our transport measurements indicate that the electron mobility 渭 鈮?60 cm<sup>2sup> V<sup>鈥?sup> s<sup>鈥?sup> at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from 鈮?00 cm<sup>2sup> V<sup>鈥?sup> s<sup>鈥?sup> at 180 K to 鈮?20 cm<sup>2sup> V<sup>鈥?sup> s<sup>鈥?sup> at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >10<sup>7sup> (10<sup>4sup>) for electrons (holes), and a near ideal subthreshold swing of 鈮?0 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer.