Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

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• 作者：Jan M眉脽ener ; J枚rg Teubert ; Pascal Hille ; Markus Sch盲fer ; J枚rg Sch枚rmann ; Maria de la Mata ; Jordi Arbiol ; Martin Eickhoff
• 刊名：Nano Letters
• 出版年：2014
• 出版时间：September 10, 2014
• 年：2014
• 卷：14
• 期：9
• 页码：5118-5122
• 全文大小：356K
• ISSN：1530-6992

文摘

We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al_0.3Ga_0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001虆]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.

Keywords:

Quantum-confined Stark effect; internal polarization fields; group III-nitride; GaN/AlGaN; single nanowire; microphotoluminescence