文摘
Considering the unique layered structure and novel optoelectronic properties of individual MoSb>2b> and MoSeb>2b>, as well as the quantum coherence or donor–acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film on conventional amorphous SiOb>2b>/Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film was successfully grown on SiOb>2b>/Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSeb>2b> film was grown along MoSb>2b> triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film. The composition and microstructure of mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film, triangular MoSb>2b> monolayer, and multilayer MoSeb>2b> film are systematically investigated. The mosaic MoSb>2b>/MoSeb>2b> lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W–1, 2.6 × 1011 Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm–2 (610 nm), possibly due to the matched band alignment of MoSb>2b> and MoSeb>2b> and strong donor–acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoSb>2b>/MoSeb>2b> in the present work will be a promising candidate for optoelectronic fields.