Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film
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- 作者：Lijuan Ye ; Dan Wang ; Shijian Chen
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2016
- 出版时间：March 2, 2016
- 年：2016
- 卷：8
- 期：8
- 页码：5280-5289
- 全文大小：566K
- ISSN：1944-8252
文摘
We report on a novel MoS2/S-doped g-C3N4 heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C3N4 film on indium–tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS2 layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C3N4 films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS2/S-doped g-C3N4 heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10–4 A/cm2 at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS2/S-doped g-C3N4 film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS2/S-doped g-C3N4 interface. The convenient preparation of carbon nitride based heterojunction films in this work can be widely used to design new heterojunction photoelectrodes or photocatalysts with high performance for H2 evolution.