Study of Ultraviolet Emission Enhancement in AlxInyGa1鈥?i>x鈥?i>yN Quaternary Alloy Film

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• 作者：Dongbo Wang ; Shujie Jiao ; Liancheng Zhao ; Tong Liu ; Shiyong Gao ; Hongtao Li ; Jinzhong Wang ; Qingjiang Yu ; Fengyun Guo
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：January 10, 2013
• 年：2013
• 卷：117
• 期：1
• 页码：543-548
• 全文大小：393K
• 年卷期：v.117,no.1(January 10, 2013)
• ISSN：1932-7455

文摘

The effect of indium cluster on enhanced ultraviolet luminescence in Al_xIn_yGa_{1鈥?i>x鈥?i>y}N quaternary alloys with increasing Al composition was investigated. X-ray diffraction (XRD), temperature-dependent photoluminescence (PL), transmittance spectra, and Raman scattering measurements have been employed to study the Al_xIn_yGa_{1鈥?i>x鈥?i>y}N quaternary alloy. Abnormal S-shaped temperature dependence of PL emissions in high Al content sample originated from carrier localization induced by indium nanoclusters, which is in good agreement with the pure InN mode measured by Raman scattering. A large Stokes shift between the emission peak and the absorption edge is also found in the high Al content sample. All these observations suggested that the enhancement of carrier localization by indium nanoclusters is responsible for the increase in radiative recombination probability with increasing Al composition. Our results demonstrated that Al_xIn_yGa_{1鈥?i>x鈥?i>y}N quaternary alloy can exhibit a larger band gap than that of GaN and enhanced ultraviolet luminescence due to the existence of indium nanoclusters. Meanwhile, the effect of indium clusters was increased with Al compositions increasing, even at low indium mole fraction about 4%.