Band Bending Inversion in Bi2Se3 Nanostructures

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• 作者：Louis Veyrat ; Fabrice Iacovella ; Joseph Dufouleur ; Christian Nowka ; Hannes Funke ; Ming Yang ; Walter Escoffier ; Michel Goiran ; Barbara Eichler ; Oliver G. Schmidt ; Bernd B眉chner ; Silke Hampel ; Romain Giraud
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：November 11, 2015
• 年：2015
• 卷：15
• 期：11
• 页码：7503-7507
• 全文大小：448K
• ISSN：1530-6992

文摘

Shubnikov鈥揹e Haas oscillations were studied under high magnetic field in Bi₂Se₃ nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 脳 10¹⁹ cm^鈥? to 6 脳 10¹⁷ cm^鈥?. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.