Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm
2 V
鈥? s
鈥? and an on/off ratio of 5.89 脳 10
8 even at low processing temperature of 250 掳C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.
Keywords:
thin-film transistor; zinc oxide; nanoparticle/precursor ink; low-temperature process