Mg Alloying in SnTe Facilitates Valence Band Convergence and Optimizes Thermoelectric Properties
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- 作者：Ananya Banik ; U. Sandhya Shenoy ; Shashwat Anand ; Umesh V. Waghmare ; Kanishka Biswas
- 刊名：Chemistry of Materials
- 出版年：2015
- 出版时间：January 27, 2015
- 年：2015
- 卷：27
- 期：2
- 页码：581-587
- 全文大小：470K
- ISSN：1520-5002
文摘
SnTe, a lead-free rock-salt analogue of PbTe, having valence band structure similar to PbTe, recently has attracted attention for thermoelectric heat to electricity generation. However, pristine SnTe is a poor thermoelectric material because of very high hole concentration resulting from intrinsic Sn vacancies, which give rise to low Seebeck coefficient and high electrical thermal conductivity. In this report, we show that SnTe can be optimized to be a high performance thermoelectric material for power generation by controlling the hole concentration and significantly improving the Seebeck coefficient. Mg (2鈥?0 mol %) alloying in SnTe modulates its electronic band structure by increasing the band gap of SnTe and results in decrease in the energy separation between its light and heavy hole valence bands. Thus, solid solution alloying with Mg enhances the contribution of the heavy hole valence band, leading to significant improvement in the Seebeck coefficient in Mg alloyed SnTe, which in turn results in remarkable enhancement in power factor. Maximum thermoelectric figure of merit, ZT, of 鈭?.2 is achieved at 860 K in the high quality crystalline ingot of p-type Sn0.94Mg0.09Te.