Solar-Blind Avalanche Photodetector Based On Single ZnO鈥揋a2O3 Core鈥揝hell Microwire

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• 作者：Bin Zhao ; Fei Wang ; Hongyu Chen ; Yunpeng Wang ; Mingming Jiang ; Xiaosheng Fang ; Dongxu Zhao
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3988-3993
• 全文大小：319K
• ISSN：1530-6992

文摘

High-performance solar-blind (200鈥?80 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO鈥揋a₂O₃ core鈥搒hell microwires. The responsivity can reach up to 1.3 脳 10³ A/W under 鈭? V bias. Moreover, the corresponding detectivity was as high as 9.91 脳 10¹⁴ cm路Hz^1/2/W. The device also showed a fast response, with a rise time shorter than 20 渭s and a decay time of 42 渭s. The quality of the detectors in solar-blind waveband is comparable to or even higher than that of commercial Si APD (APD120A2 from Thorlabs Inc.), with a responsivity 鈭? A/W, detectivity 鈭?0¹² cm路Hz^1/2/W, and response time 鈭?0 ns. The high performance of this APD make it highly suitable for practical applications as solar-blind photodetectors, and this core鈥搒hell microstructure heterojunction design method would provide a new approach for realizing an APD device.