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Fabrication of MgFe2O4/MoS2 Heterostructure Nanowires for Photoelectrochemical Catalysis
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文摘
A novel one-dimensional MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> heterostructure has been successfully designed and fabricated. The bare MgFe<sub>2sub>O<sub>4sub> was obtained as uniform nanowires through electrospinning, and MoS<sub>2sub> thin film appeared on the surface of MgFe<sub>2sub>O<sub>4sub> after further chemical vapor deposition. The structure of the MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> heterostructure was systematic investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectrometry (XPS), and Raman spectra. According to electrochemical impedance spectroscopy (EIS) results, the MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> heterostructure showed a lower charge-transfer resistance compared with bare MgFe<sub>2sub>O<sub>4sub>, which indicated that the MoS<sub>2sub> played an important role in the enhancement of electron/hole mobility. MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> heterostructure can efficiently degrade tetracycline (TC), since the superoxide free-radical can be produced by sample under illumination due to the active species trapping and electron spin resonance (ESR) measurement, and the optimal photoelectrochemical degradation rate of TC can be achieved up to 92% (radiation intensity: 47 mW/cm<sup>2sup>, 2 h). Taking account of its unique semiconductor band gap structure, MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> can also be used as an photoelectrochemical anode for hydrogen production by water splitting, and the hydrogen production rate of MgFe<sub>2sub>O<sub>4sub>/MoS<sub>2sub> was 5.8 mmol/h·m<sup>2sup> (radiation intensity: 47 mW/cm<sup>2sup>), which is about 1.7 times that of MgFe<sub>2sub>O<sub>4sub>.

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