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Near-Infrared Photoluminescence in the Femtosecond Time Region in Monolayer Graphene on SiO2
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文摘
We investigate the dynamical properties of photoexcited carriers in a single monolayer of graphene at room temperature in air using femtosecond time-resolved luminescence spectroscopy. The luminescence kinetics are observed in the near-infrared region of 0.7鈥?.4 eV and analyzed based on the two-temperature model describing the cooling of thermalized carriers via the carrier鈥搊ptical phonon interaction. The observed luminescence in the range 0.7鈥?.9 eV is well reproduced by the model. In the range 1.0鈥?.4 eV, however, the luminescence, which decays in 300 fs, cannot be reproduced by this model. These results indicate that the carrier system is not completely thermalized in 300 fs. We also show the importance of the carrier-doping effect induced by the substrate and surrounding environment in the carrier cooling dynamics and the predominance of optical phonons over acoustic phonons in the carrier鈥損honon interactions even at a temperature of 400 K.

Keywords:

monolayer graphene; photocarrier relaxation; carrier cooling dynamics; carrier鈭抪honon interaction; photoluminescence; femtosecond time-resolved luminescence spectroscopy

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