New Chemical Method of Obtaining Thick Ga1-xMnxN Layers: Prospective Spintronic Material
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- 作者：Michal Kaminski ; Slawomir Podsiadlo ; Pawel Dominik ; Krzysztof Wozniak ; Lukasz Dobrzycki ; Rafal Jakiela ; Adam Barcz ; Marek Psoda ; Jaroslaw Mizera ; Rajmund Bacewicz ; Marcin Zajac ; Andrzej Twardowski
- 刊名：Chemistry of Materials
- 出版年：2007
- 出版时间：June 26, 2007
- 年：2007
- 卷：19
- 期：13
- 页码：3139 - 3143
- 全文大小：209K
- 年卷期：v.19,no.13(June 26, 2007)
- ISSN：1520-5002
文摘
The synthesis and characterization of Ga1-xMnxN thick layers are reported. The layers were preparedby the modified sublimation sandwich method (SSM) from GaN powder and powdered Mn sources andreacted with ammonia. Ga1-xMnxN layers having a current maximum size of 60 
m thickness and 10mm × 10 mm area were obtained. The crystals of best crystalline quality were obtained with a growthrate of 25 m/h. SIMS measurements showed the presence of layers containing up to 4 atom % Mn.Measurements involving X-ray diffraction (structure refinement), rocking curves, map of reflections,and EXAFS confirmed good structural properties without phase separation. The measurements carriedout by a superconducting quantum interferometer showed that the material revealed typical paramagneticproperties.
m thickness and 10mm × 10 mm area were obtained. The crystals of best crystalline quality were obtained with a growthrate of 25 m/h. SIMS measurements showed the presence of layers containing up to 4 atom % Mn.Measurements involving X-ray diffraction (structure refinement), rocking curves, map of reflections,and EXAFS confirmed good structural properties without phase separation. The measurements carriedout by a superconducting quantum interferometer showed that the material revealed typical paramagneticproperties.