Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

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• 作者：Alexander D. Mottram ; Yen-Hung Lin ; Pichaya Pattanasattayavong ; Kui Zhao ; Aram Amassian ; Thomas D. Anthopoulos
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 24, 2016
• 年：2016
• 卷：8
• 期：7
• 页码：4894-4902
• 全文大小：560K
• ISSN：1944-8252

文摘

We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In₂O₃) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10⁶ and a responsivity value of up to 2 × 10³ A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In₂O₃/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400–700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.