Crystal Growth of 伪-HgI2 by the Temperature Difference Method for High Sensitivity X-ray Detection

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• 作者：Zhaojun Zhang ; Wei Zheng ; Anqi Chen ; Kai Ding ; Feng Huang
• 刊名：Crystal Growth & Design
• 出版年：2015
• 出版时间：July 1, 2015
• 年：2015
• 卷：15
• 期：7
• 页码：3383-3387
• 全文大小：344K
• ISSN：1528-7505

文摘

伪-HgI₂ is a promising material for room temperature X-ray detection. A facile temperature difference method is designed to grow 4 脳 4 脳 2 mm³ 伪-HgI₂ bulk crystal from KI aqueous solution. Characterization results indicate the as-grown high quality crystals are single-crystalline and possess a standard bandgap (E_g = 2.16 eV at 300 K) and high electrical resistivity (10¹⁰ 惟路cm). Utilizing the as-grown crystal, moreover, a photoconductive type prototype X-ray detector is fabricated. The detector behaves at high X-ray sensitivity, which is improved by one order of magnitude in comparison with previous results from solution grown 伪-HgI₂. In addition to 伪-HgI₂, the crystal growth of other halides materials which are used for X-ray detection, e.g., PbI₂, HgBr₂, BiI₃, may also benefit from the presented temperature difference method.