Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

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• 作者：J. Bohm^l ; ^bohm@fzu.cz ; M. Mikestikova^l ; A.A. Affolder^h ; P.P. Allport^h ; R. Bates^e ; C. Betancourt^m ; H. Brown^h ; C. Buttar^e ; J.R. Carter^b ; G. Casse^h ; H. Chen^a ; A. Chilingarov^g ; V. Cindroⁱ ; A. Clark^d ; N. Dawson^m ; B. DeWilde^o ; F. Doherty^e ; Z. Dolezal^k ; L. Eklund^e ; V. Fadeyev^m ; D. Ferrere^d ; H. Fox^g ; R. Frenchⁿ ; C. Garcia^q ; M. Gerling^m ; S. Gonzalez Sevilla^d ; I. Gorelov^j ; A. Greenall^h ; A.A. Grillo^m ; K. Hara^p ; H. Hatano^p ; M. Hoeferkamp^j ; L.B.A. Hommels^b ; Y. Ikegami^f ; K. Jakobs^c ; J. Kierstead^a ; P. Kodys^k ; M. Kö ; hler^c ; T. Kohriki^f ; G. Krambergenⁱ ; C. Lacasta^q ; Z. Li^a ; S. Lindgren^m ; D. Lynn^a ; P. Maddock^m ; I. Mandicⁱ ; S. Marti i Garcia^q ; F. Martinez-McKinney^m ; R. Maunu^o ; R. McCarthy^o ; J. Metcalfe^j ; M. Mikuzⁱ ; M. Minano^q ; S. Mitsui^p ; V. O'Shea^e ; S. Paganisⁿ ; U. Parzefall^c ; D. Puldon^o ; D. Robinson^b ; H.F.-W. Sadrozinski^m ; S. Sattari^m ; D. Schamberger^o ; S. Seidel^j ; A. Seiden^m ; U. Soldevila^q ; S. Terada^f ; K. Toms^j ; D. Tsionouⁿ ; Y. Unno^f ; J. Von Wilpert^m ; M. Wormald^h ; J. Wright^m ; M. Yamada^p
• 关键词：Silicon ; Micro-strip ; ATLAS ID upgrade ; SLHC ; Leakage current ; Depletion voltage ; Electrical characteristics ; Coupling capacitance ; Inter-strip capacitance ; Inter-strip resistance
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2011
• 出版时间：21 April, 2011
• 年：2011
• 卷：636
• 期：1_supp_S
• 页码：S104-S110
• 全文大小：1K

文摘

The ATLAS collaboration R&D group ¡°Development of n-in-p Silicon Sensors for very high radiation environment?has developed single-sided p-type 9.75 cm¡Á9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10¹⁵ 1-MeV neutron equivalent (n_eq)/cm² fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of Sciences of CR and Charles University in Prague. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.