Influence of TMIn flow rate on structural and optical quality of AlInGaN/GaN epilayers grown by MOCVD
详细信息 查看全文
- 作者：R. Loganathan logu73511@gmail.com" class="auth_mail" title="E-mail the corresponding author ; K. Prabakaran ; S. Pradeep ; S. Surender ; Shubra Singh ; K. Baskar ; drbaskar2009@gmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Nitride materials ; Optical materials ; Vapor deposition ; AFM ; Luminescence
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：25 January 2016
- 年：2016
- 卷：656
- 期：Complete
- 页码：640-646
- 全文大小：2486 K
文摘
- •
Nearly lattice-matched AlInGaN grown on (0001) Al2O3 substrate by MOCVD at 750 °C.
- •
TMIn flow has a strong influence on the structural and optical quality of AlInGaN.
- •
High TMIn flow (200 sccm) could be decrease the threading dislocation density.
- •
Tunable optical bandgap from 3.69 to 3.78 eV was obtained.
- •
The existence A1(LO) mode of In(Ga)N clusters has been verified by Raman spectra.