Structural and optical characterisations of nitrogen doped ZnO nanowires grown by MOCVD

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• 作者：A. Souissi^a ; N. Haneche^b ; A. Meftah^a ; ^{abdel01meftah@yahoo.fr} ; C. Sartel^b ; C. Vilar^b ; A. Lusson^b ; P. Galtier^b ; V. Sallet^b ; M. Oueslati^a
• 关键词：MOCVD ; Zinc oxide ; Nitrogen doping ; Photoluminescence ; Raman scattering
• 刊名：Journal of Luminescence
• 出版年：2013
• 出版时间：April, 2013
• 年：2013
• 卷：136
• 期：Complete
• 页码：265-269
• 全文大小：1020 K

文摘

ZnO nanowires with different nitrogen concentrations were grown by metalorganic chemical vapour deposition (MOCVD) using DEZn, NO₂ and NH₃ as zinc, oxygen and nitrogen doping sources respectively. The NH₃ concentration in the vapour phase varied from 0 to 13.8 ¦Ìmol min^?1 to favour the nitrogen incorporation. The ZnO nanowires were characterised by scanning electron microscopy, photoluminescence and micro-Raman spectroscopy. Two additional intense Raman peaks at 272 and 580 cm^?1 are found to be related to the nitrogen incorporation. Micro-Raman scattering of a single nanowire probes the uniformity of the nitrogen concentration along the nanowire for highly doped samples. The photoluminescence (PL) spectra exhibit donor-acceptor pair band which confirms the incorporation of the nitrogen in the ZnO nanowires.