Crystal growth and scintillation properties of Pr-doped oxyorthosilicate for different concentration

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• 作者：Daisuke Totsuka^a ; ^b ; ^{totsuka@mail.tagen.tohoku.ac.jp"" rel=""nofollow} ; Takayuki Yanagida^d ; Yutaka Fujimoto^a ; Jan Pejchal^a ; ^c ; Yuui Yokota^a ; Akira Yoshikawa^a ; ^d
• 关键词：Scintillator ; Pr³⁺ ; Oxyorthosilicate ; Crystal growth from the melt ; Radiation response
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2011
• 出版时间：1 July 2011
• 年：2011
• 卷：643
• 期：1
• 页码：64-68
• 全文大小：908 K

文摘

0.05, 0.1 and 0.25 mol % Pr (with respect to Lu) doped Lu₂SiO₅ (LSO) single crystals were grown by the micro-pulling down (μ-PD) method. The grown crystals were transparent, and a slight segregation of Pr³⁺ was observed both in the crystal cross-section and growth direction. Transparency in the visible wavelength range was about 80 % in all the crystals. Intense absorptions related with the Pr³⁺ 4f–5d transitions were observed around 230 and 255 nm, and weak absorptions due to the 4f–4f transitions were detected around 450 nm. In radioluminescence spectra, the Pr³⁺ 5d–4f transitions were observed around 275and 310 nm, and emissions due to the 4f–4f transition were observed around 500 nm. In the pulse height analysis using ¹³⁷Cs gamma-ray excitation, Pr 0.1 % doped sample showed the highest light yield of 2,800 ph/MeV. In the decay time measurements using different excitation sources (photoluminescence, X- and gamma-ray), two different processes related to the 5d–4f emission peaks were found. Fast decay component corresponds to direct excitation of Pr³⁺ (4–6 ns) and slower component (25 ns) reflects the energy migration process from the host lattice to the emission center.