An H<sub>2sub>S sensor based on randomly distributed nano p-n junction between CuO and WO<sub>3sub> has been demonstrated. Modification with CuO resulted in enhanced response kinetics towards H<sub>2sub>S with high selectivity. CuO modified WO<sub>3sub> thin films corresponding to 2.25 at % of Cu exhibited a sensor response of 534 in comparison to that of pure WO<sub>3sub> thin films that exhibited a sensor response of 21 towards 10 ppm of H<sub>2sub>S at an operating temperature of 300 ¡ãC. This enhanced response kinetics has been attributed to the formation of random nano p-n junctions distributed over the surface of the sensor film and the unique interaction of CuO with H<sub>2sub>S. At elevated temperature exposure to H<sub>2sub>S resulted in the conversion of CuO to CuS, which being metallic in nature causes a drastic change in the resistance of the sensor films. Formation of nano p-n junctions is supported by the increase in the sensor resistance upon CuO modification and is further corroborated by the work function studies.