Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching
详细信息 查看全文
- 作者：Kwang Hyeon BaikaAuthor Vitae ; Jimin KimbAuthor Vitae ; Soohwan Jangb ; jangmountain@dankook.ac.kr" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：GaN ; Hydrogen ; Sensor ; a-plane ; Etching
- 刊名：Sensors & Actuators: B. Chemical
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：238
- 期：Complete
- 页码：462-467
- 全文大小：1401 K
文摘
- •
Photo-chemically etched a-plane GaN Schottky diode hydrogen sensor was developed.
- •
The etched large surface offers more active adsorption sites for hydrogen molecules.
- •
The high sensitivity of the device for hydrogen was observed up to 500 °C.