Theoretical study on In_xGa_1−xN/GaN quantum dots solar cell

详细信息    查看全文

• 作者：Qingwen Deng ; Xiaoliang Wang ; Cuibai Yang ; Hongling Xiao ; Cuimei Wang ; Haibo Yin ; Qifeng Hou ; Jinmin Li ; Zhanguo Wang ; Xun Hou
• 关键词：Efficiency ; Quantum dot ; GaN
• 刊名：Physica B
• 出版年：2011
• 出版时间：1 January 2011
• 年：2011
• 卷：406
• 期：1
• 页码：73-76
• 全文大小：459 K

文摘

In this work, the structure of In_xGa_1−xN/GaN quantum dots solar cell is investigated by solving the Schrödinger equation in light of the Kronig–Penney model. Compared to p–n homojunction and heterojunction solar cells, the In_xGa_1−xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.