Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputtering
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- 作者：Neeti Gupta ; neeti.gupta30@gmail.com" class="auth_mail" title="E-mail the corresponding author ; neeti.gupta@student.unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; Binesh Puthen Veettill ; Gavin Conibeer ; Santosh Shrestha
- 关键词：Sputtering ; a-GexC1 ; &minus ; ; x ; XPS ; Optical band gap ; Germanium carbide
- 刊名：Journal of Non-Crystalline Solids
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：443
- 期：Complete
- 页码：97-102
- 全文大小：915 K
文摘
- •
a-GexC1 − x films were grown at different substrate temperatures on Si (100) and Quartz substrates.
- •
X-ray photoelectron spectroscopy evidence the formation of Ge
C bond in the films.- •
Maximum 21% of a-GexC1 − x is found using XPS peak fitting analysis for the film deposited with 250 °C ,50 W RF power.
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Ge
C mode is identified near 1497.2 cm− 1 in a-GexC1 − x film using Raman spectroscopy for the film deposited at 250 °C, 50 W.- •
Optical band gap tuned from 2.7 eV to 1.0 eV.