Ga-migration on a Ga-rich and As-stabilized surfaces: Ga-droplet and GaAs- nanostructure formation

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• 作者：Jong Su Kim ; ^{jongsukim@ynu.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Droplet epitaxy ; Ga-migration ; Ga-droplet formation ; GaAs nanostructures
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：57
• 期：Complete
• 页码：70-76
• 全文大小：790 K

文摘

This study investigates the Ga migration behavior in the droplet formation process on GaAs (100), (111)A, and (111)B surfaces. A Ga migration model, consisting of intrinsic and thermally induced Ga migration on Ga-rich surface, is proposed. This model can explain the Ga migration on Ga-rich surface at low temperature compared to the conventional growth mode of GaAs epitaxy. The Ga migration length is greatest for (111)B, followed by (100) and (111)A surfaces at temperature ranging from 50 to 500 °C. The Ga diffusion from a droplet also discuss under As-stabilized conditions. The Ga diffusion direction and length strongly depend on the surface orientation and surface stoichiometry.