Study of fin tapering effect in nanoscale symmetric dual-k spacer (SDS) hybrid FinFETs

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• 作者：K.P. Pradhan ; ^{k.p.pradhan@ieee.org" class="auth_mail" title="E-mail the corresponding author} ; Priyanka ^{priyankarajputnit@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; P.K. Sahu ^{pksahu@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Hybrid FinFETs ; Dual-k spacer ; Tapered trigate FinFETs ; Fin angle ; Fin height ; Short channel effects (SCEs)
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：57
• 期：Complete
• 页码：185-189
• 全文大小：732 K

文摘

Symmetric Dual-k Spacer (SDS) Hybrid FinFETs is a novel device, which combines three significant technologies i.e., 2-D ultra-thin-body (UTB), 3-D FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. For the first time, this article systematically analyzes the impacts of non-rectangular fin shape on various performance metrics of SDS Hybrid FinFETs. Under distinctive inclination fin angles as prescribed by the process technology, the performances of the device at different fin heights are examined. This work evaluates the response of fin tapering as well as fin height on parameters like threshold voltage (V_th), subthreshold slope (SS), on current (I_on), transconductance (g_m), transconductance generation factor (TGF), and total gate capacitance (C_gg) in SDS Hybrid FinFETs. Optimum structural configuration is thus proposed to fabricate the hybrid device in sub-20 nm FinFET architecture.