Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
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- 作者：Wei-Cheng Wang ; Meng-Chen Tsai ; Yi-Ping Lin ; Yi-Jen Tsai ; Hsin-Chih Lin ; hclinntu@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Miin-Jang Chen ; mjchen@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Metal oxide semiconductor (MOS) ; Atomic layer deposition (ALD) ; Buffer layer ; NH3 plasma ; Zirconium dioxide (ZrO2) ; Aluminum nitride (AlN)
- 刊名：Materials Chemistry & Physics
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：184
- 期：Complete
- 页码：291-297
- 全文大小：2317 K
文摘
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The crystalline ZrO2 high-K dielectric/AlN buffer layer gate stack was prepared.
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The AlN buffer layer suppressed the formation of the low-K interfacial layer.
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The Jg was also reduced thanks to the insertion of the amorphous AlN buffer layer.
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Remote NH3 plasma treatment improved the CET, Dit, and Jg.